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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I IIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 30 ns Inductive Fall Time -- 25_C (Typ) 500 ns Inductive Storage Time -- 25_C (Typ) Operating Temperature Range -65 to + 200_C The MJ10007 Darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and Relay Drivers * Motor Controls * Deflection Circuits Fast Turn-Off Times 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents Designer's and SWITCHMODE are trademarks of Motorola, Inc. (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA Preferred devices are Motorola recommended choices for future use and best overall value. THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 2 Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating v 10%. 100 15 Symbol Symbol TJ, Tstg VCEO VCEV VCEX RJC VEB IC ICM IB IBM PD TL 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS MJ10007 * - 65 to + 200 *Motorola Preferred Device Value 1.17 Max 150 100 0.86 275 500 450 400 2.5 5.0 8.0 10 20 Order this document by MJ10007/D CASE 1-07 TO-204AA (TO-3) Watts _C/W W/_C Unit Unit Adc Adc Vdc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I 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IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJ10007 (1) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. (1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. (2) Pulse Test: PW = 300 s, Duty Cycle 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) SECOND BREAKDOWN OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Crossover Time Storage Time Crossover Time Storage Time Inductive Load Clamped (Table 1) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Small Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Diode Forward Voltage (1) (IF = 5.0 Adc) Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 250 mAdc) (IC = 5.0 Adc, IB = 250 mAdc, TC = 100_C) Collector Emitter Saturation Voltage (IC = 5.0 Adc, IB = 250 mAdc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 5.0 Adc, IB = 250 mAdc, TC = 100_C) DC Current Gain (IC = 2.5 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) Second Breakdown Collector Current with base forward biased Emitter Cutoff Current (VEB = 2 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1 5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) Collector-Emitter Sustaining Voltage (Table 1, Figure 12) (IC = 1 A, Vclamp = Rated VCEX, TC = 100_C) (IC = 5 A, Vclamp = Rated VCEX, TC = 100_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 250 mA, IB = 0, Vclamp = Rated VCEO) 2 (IC = 5.0 A(pk), Vclamp = Rated VCEX, IB1 = 250 mA, VBE(off) = 5.0 Vdc, TC = 25_C) (IC = 5.0 A(pk), Vclamp = Rated VCEX, IB1 = 250 mA, VBE(off) = 5.0 Vdc, TC = 100_C) (VCC = 250 Vdc, IC = 5.0 A, IB1 = 250 mA, VBE(off) = 5.0 Vdc, tp = 50 s, Duty Cycle 2.0%) Characteristic v v VCEO(sus) VCEX(sus) VCE(sat) VBE(sat) Symbol Motorola Bipolar Power Transistor Device Data IEBO ICER ICEV Cob hFE IS/b hfe tsv tsv Vf td tc ts tr tf tc Min 450 325 400 60 10 40 30 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.06 0.25 0.05 Typ See Figure 11 0.3 0.5 0.6 0.8 0.5 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.25 5.0 Max 275 500 300 175 1.5 2.0 0.5 1.5 0.6 0.2 2.5 2.5 1.9 2.9 2.0 5.0 -- -- -- -- -- -- 5 mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc pF s s s s s s s s -- -- MJ10007 TYPICAL CHARACTERISTICS 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 10 7 5 3 0.1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.4 3 2.6 IC = 0.3 A 2.2 1.8 1.4 1 0.6 10 20 30 100 50 70 200 300 IB, BASE CURRENT (mA) 500 700 1 k 2.5 A 5A 10 A TJ = 25C TJ = 150C 25C - 55C VCE = 5 V 0.2 0.3 2 3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 1. DC Current Gain Figure 2. Collector Saturation Region V CE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 2.4 IC/IB = 10 VBE, BASE-EMITTER VOLTAGE (VOLTS) 2.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 5 V TJ = - 55C 25C 1.6 25C 1.2 150C 0.8 0.1 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) 5 7 10 2 2.4 1.6 TJ = - 55C 1.2 25C 0.8 150C 0.4 0.1 0.5 0.7 1 23 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 5 7 10 2 Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage 103 VCE = 250 V 102 TJ = 125C 100C 101 REVERSE 25C 10-1 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 75C Cob , OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT ( A) 400 TJ = 25C 200 Cob 100 80 60 40 0.1 0.2 0.5 100 FORWARD 1 2 5 10 20 50 100 200 500 1000 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Output Capacitance Motorola Bipolar Power Transistor Device Data 3 MJ10007 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCEX(sus) AND INDUCTIVE SWITCHING INDUCTIVE TEST CIRCUIT 20 1 TUT 1 INPUT 2 SEE ABOVE FOR DETAILED CONDITIONS 2 Rcoil Lcoil VCC RESISTIVE SWITCHING INPUT CONDITIONS 0 1N4937 OR EQUIVALENT Vclamp RS = 0.1 PW Varied to Attain IC = 250 mA Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) Lcoil = 180 H Rcoil = 0.05 VCC = 20 V fo = 500 kHz CIRCUIT VALUES Vclamp = Rated VCEX Value VCC = 250 V RL = 50 Pulse Width = 50 s INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT TUT TEST CIRCUITS 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 Rcoil Lcoil VCC IC IC(pk) tf UNCLAMPED [ t2 t1 Adjusted to Obtain IC t1 t2 Lcoil (IC VCC Lcoil (IC pk VClamp ) pk ) 1 2 TUT RL VCC tf CLAMPED t t1 VCE VCE or Vclamp t TIME t2 tf Test Equipment Scope -- Tektronix 475 or Equivalent SWITCHING TIMES NOTE IC 90% Vclamp tsv trv tc Vclamp 90% IB1 IB 10% Vclamp 10% IC 2% IC 90% IC tfi Vclamp tti In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the turn-off waveforms is shown in Figure 7 to aid in the visual identity of these terms. TIME Figure 7. Inductive Switching Measurements 4 Motorola Bipolar Power Transistor Device Data SWITCHING TIMES NOTE (continued) For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222. PSWT = 1/2 VCC IC (tc) f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. ] MJ10007 RESISTIVE SWITCHING PERFORMANCE 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 5 VCC = 250 V IB1 = 250 mA TJ = 25C t, TIME ( s) 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 tf VBE(off) = 5 V VCC = 250 V IB1 = 250 mA TJ = 25C ts t, TIME ( s) tr td 0.1 0.2 0.5 0.7 1 3 0.3 2 IC, COLLECTOR CURRENT (AMP) 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 8. Turn-On Time Figure 9. Turn-Off Time r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 P(pk) RJC = r(t) JC RJC = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 t2 READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) DUTY CYCLE, D = t1/t2 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 0.01 0.01 Figure 10. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MJ10007 The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. 20 IC, COLLECTOR CURRENT (AMPS) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 4.0 MJ10007 6.0 10 20 40 60 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 350 400 dc 5.0 ms 1.0 ms 10 s SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS 100 s TC = 25C BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED Figure 11. Forward Bias Safe Operating Area 10 IC, COLLECTOR CURRENT (AMP) TURN OFF LOAD LINE BOUNDARY FOR MJ10007 THE LOCUS FOR MJ10006 IS 50 V LESS TJ 4 8 6 v 100C VBE(off) = 5 V VBE(off) = 2 V VBE(off) = 0 V 2 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as V CEX(sus) at a given collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area characteristics. 0 0 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 12. Reverse Bias Switching Safe Operating Area 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 160 80 120 TC, CASE TEMPERATURE (C) 200 Figure 13. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJ10007 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 7 MJ10007 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *MJ10007/D* MJ10007/D |
Price & Availability of MJ10007
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